Domino effect amplifier
US4897617A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1989 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | Feb 28, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/426
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This high voltage linear FET amplifier operates at voltage levels of ten's of thousand's of volts with power dissipation capabilities in the kilowatt range. It is a broadband device which features power amplification from DC to frequencies well in excess of 100 KHz. The amplifier uses a unity-gain inverting amplifier as its basic building block. N-number of these building blocks are stacked to accommodate whatever voltage stand-off level is desired. To operate stacked high voltage amplifiers, it is necessary to provide a bias shift (reference) progressively increasing in equal increments from the ground reference stage to the highest voltage level stage while preserving the fidelity of the signal applied to the first stage. This is done by establishing a phantom ground at all amplifiers for each progressive bias level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.