Protection structure for an integrated circuit
US4897757A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1988 |
| Grant date | Jan 30, 1990 |
| Priority date | — |
| Expiry date | Dec 6, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the substrate (23) of an integrated circuit, around a pad area, a first region (24) of the first conductivity type having a high doping level in turn formed in a second region (25) of the second conductivity type and, beyond the first region with respect to the pad, a third region (26) of the second conductivity type at least partially in contact with the second region, are formed. The pad metallization (20) also establishes a contact with a portion (27) of the first region surface. A second metallization (30) connects the first region to the third one at such a location that the current path between, on the one hand, the contact area between the pad metallization and the first region and, on the other hand, the area where the third region forms a junction with the substrate (corresponding to an avalanche diode) follows a resistive path in at least one of the first or third regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.