Method of fabricating a semiconductor integrated circuit
US4898837A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1988 |
| Grant date | Feb 6, 1990 |
| Priority date | — |
| Expiry date | Nov 15, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method of fabricating a semiconductor integrated circuit comprises the steps of: forming buried layers in predetermined regions of a semiconductor substrate; forming an epitaxial layer covering the substrate and the buried layers; forming isolation regions dividing the epitaxial layer into a plurality of islands; selectively implanting ions to form a base region of a vertical bipolar transistor in a surface layer of one island and simultaneously to form a resistor region in a surface layer of another island; and selectively diffusing impurities into a surface layer of the base region, to form an emitter region of the vertical bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.