Current sense circuit for a ROM system
US4899309A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1988 |
| Grant date | Feb 6, 1990 |
| Priority date | — |
| Expiry date | Jul 28, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a current sense circuit for detecting a read current from a selected memory cell in a memory cell matrix of a ROM, each of a first series circuit and a second series circuit comprises: a current supply means having a first main electrode connected to a power supply; a first MOS FET having a first main electrode connected to the second main electrode of the current supply means; and a second MOS FET having a first main electrode connected to the second main electrode of the first MOS FET, a second main electrode connected to a second power supply, and a gate electrode connected to the first main electrode of the first MOS FET. The gate electrode of the first and the second MOS FETs of the reference voltage generator are connected together; the gate electrodes of the first MOS FETs of the first and second series circuits are connected together; and the ratio of the current driving capability between the first MOS FET of the first series circuit and the first MOS FET of the second series circuit is substantially equal to the ratio of the current driving capability between the second MOS FET of the first series circuit and the second MOS FET of the second series circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.