Method of making a polycide gate using a titanium nitride capping layer
US4900257A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 14, 1988 |
| Grant date | Feb 13, 1990 |
| Priority date | — |
| Expiry date | Apr 14, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/976
Abstract
A semiconductor device has a multilayer comprising a refractory metal silicide and a metal nitride on a silicon layer. The metal nitride prevents the silicon layer from being oxidized so that a good ohmic contact is obtained. A method of manufacturing the semniconductor device comprises steps of forming a polysilicon layer, implanting impurity ions into the polysilicon, removing a self oxidation film from the polysilicon layer, sequentially forming refractory metal and its nitride, patterning, and silicifying the metal. The method provides a semiconductor device having a good ohmic contact, a reduced resistivity of interconnections and high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.