Process for producing single-crystal ceramics
US4900393A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 1989 |
| Grant date | Feb 13, 1990 |
| Priority date | — |
| Expiry date | May 26, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/22
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides a process for causing growth of single crystal from the junction of a single crystal/polycrystal joined body by a low-temperature heat treatment by making use of the solid-phase growth of crystal. The growth of single crystal can be accomplished staby, with high reliability and in a solid phase by producing a stage satisfies the conditions for abnormal grain growth only at the portion close to the junction, that is, a state in which the joined body is locally kept higher than the grain growth temperature, by making use of the temperature gradient at the junction or the corresponding concentration of the additive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.