Patent · US Expired

Continuous process for refining silicon

US4900532A · kind A · utility

14Cited by
4References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 9, 1988
Grant dateFeb 13, 1990
Priority date
Expiry dateAug 9, 2008

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC01B33/037
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

An improved process for purifying and refining silicon containing impurities comprises: PA1 (i) continuously melting impure silicon to form a thin film silicon melt, preferably on an inclined surface of a silicon-resistant material, PA1 (ii) continuously treating the thin film silicon melt with a reactive gas with or without an inert gas, PA1 (iii) optionally degassing the treated silicon melt, and thereafter PA1 (iv) continuously crystallizing the treated silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.