Continuous process for refining silicon
US4900532A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1988 |
| Grant date | Feb 13, 1990 |
| Priority date | — |
| Expiry date | Aug 9, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B33/037
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An improved process for purifying and refining silicon containing impurities comprises: PA1 (i) continuously melting impure silicon to form a thin film silicon melt, preferably on an inclined surface of a silicon-resistant material, PA1 (ii) continuously treating the thin film silicon melt with a reactive gas with or without an inert gas, PA1 (iii) optionally degassing the treated silicon melt, and thereafter PA1 (iv) continuously crystallizing the treated silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.