Rapid thermal annealing of TFEL panels
US4900584A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1988 |
| Grant date | Feb 13, 1990 |
| Priority date | — |
| Expiry date | Sep 27, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process for fabrication and annealing of TFEL panels includes the steps of depositing a laminar stack of thin films on a glass substrate containing a first set of electrodes, the laminar stack comprising at least one insulating layer and an EL phosphor layer and annealing the laminar stack under an array of high intensity flash lamps at a temperature exceeding 450.degree. C. for a period of between 15 and 240 seconds. The flash lamps bring the temperature of the laminar stack to the required high temperature very quickly and the stack is cooled very quickly at the end of the annealing period. This process conditions the EL phosphor layer but does not warp the glass substrate or damage the thin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.