Pseudo uniphase charge coupled device fabrication by self-aligned virtual barrier and virtual gate formation
US4900688A · kind A · utility
10Cited by
11References
19Claims
0Family size
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Inventor
Key dates
| Filing date | Apr 3, 1989 |
| Grant date | Feb 13, 1990 |
| Priority date | — |
| Expiry date | Apr 3, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D44/041
Abstract
A pseudo uniphase CCD array having four functional regions, a clocked barrier region, a clocked well region, a virtual barrier region, and a gate variable potential well region per stage. The described structure allows flexibility in setting operating voltages and avoids the breakdown and fabrication difficulties of a virtual well region. The device employs a virtual barrier plus adjacent MOS well fixed potential region and uses clocking of barrier and well regions to achieve charge transfer. A fabrication sequence and operating potential selection criteria are also included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.