Double-base hot carrier transistor
US4901122A · kind A · utility
2Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1989 |
| Grant date | Feb 13, 1990 |
| Priority date | — |
| Expiry date | Mar 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/362
Abstract
A hot electron transistor includes two base regions between the emitter and collector, with the first and second bases separated by a base-base barrier. The emitter injects high energy electrons across an emitter barrier into the first base, which acts as an electron gun to focus and accelerate the electrons and inject them across the base-base barrier into the second base. An input signal is applied to the second base, to modulate the flow of electrons from the second base across a collector barrier and into the collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.