Transverse injection surface emitting laser
US4901327A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 24, 1988 |
| Grant date | Feb 13, 1990 |
| Priority date | — |
| Expiry date | Oct 24, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser for emitting light transverse to the direction of current injection. The laser is fabricated from a substrate having planar top and bottom surfaces and an aperture formed therebetween. An optical cavity, formed upon the substrate top surface and aligned with the aperture, has co-planar top and bottom surfaces with dielectric mirrors formed thereupon. Contacts are formed adjacent the optical cavity for conducting current through the optical cavity in a direction substantially parallel to the optical cavity top and bottom surfaces. Current confinement layers are disposed in intimate contact with the optical cavity for confining current flowing in the optical cavity along a predetermined path extending between the contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.