Sputtering method and apparatus
US4902394A · kind A · utility
22Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 1988 |
| Grant date | Feb 20, 1990 |
| Priority date | — |
| Expiry date | Jan 20, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/548
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering method and apparatus for use in forming thin films on a substrate. The power output of a sputtering power source is periodically changed to a high level power and a low level power, and each film is deposited to a thickness corresponding to the integrated value of the high level power, whereby a desired thickness can be obtained in any of multilayer films having mutually different film thickness ratios.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.