Surface modification using low energy ground state ion beams

US4902647A · kind A · utility

Assignee

• The United States of America as represented by the Administrator of the National Aeronautics and Space Administration · US

Inventors

• Ara Chutjian · La Cañada Flintridge, US
• Michael H. Hecht · Los Angeles, US
• Otto J. Orient · Duarte, US

Key dates

• Filing date: Oct 21, 1988
• Grant date: Feb 20, 1990
• Expiry date: Oct 21, 2008

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/961
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux and energy. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation.