CCD read only memory
US4903097A · kind A · utility
2Cited by
9References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 24, 1986 |
| Grant date | Feb 20, 1990 |
| Priority date | — |
| Expiry date | Feb 24, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/335
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The specification describes a high capacity nonvolatile CCD read only memory system that includes a plurality of memory cells. Selected ones of the memory cells include a double-diffused region having a first and second implant or diffusion under a clocked electrode whereby the first implant or diffusion provides a fixed charge required for ROM operation and the charge and polarity of said second implant or diffusion provides a neutralizing effect on the surface potential under the clocked electrode and above the double implanted or double diffused region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.