Phase modulation semiconductor laser array
US4903275A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1989 |
| Grant date | Feb 20, 1990 |
| Priority date | — |
| Expiry date | Mar 20, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4081
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A phase-locked semiconductor laser array is dephased-locked by forming at least two p-type contacts electrically isolated from one another coupled to one side of the active region and a single contact layer coupled to the other side of the active region. The same current is applied to two p-type contacts to form a single phase-locked far-field lobe. A different current is applied to one of the two p-type contacts to drive one contact harder than the other to form a dephased multiple lobe beam. An effective aperture at the receiver receives the in-phase single lobe and blocks the multiple lobes to produce a modulation effect at the receiver.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.