Method of manufacturing a single crystal of compound semiconductor and apparatus for the same
US4904336A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1988 |
| Grant date | Feb 27, 1990 |
| Priority date | — |
| Expiry date | Apr 25, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for manufacturing a single crystal of compound semiconductor consisting of Ga and As comprises a crucible storing Ga and having a seed crystal arranged at a lower end portion thereof a gas material susceptor, arranged below the crucible, for storing As, the gas material susceptor and the crucible being arranged in a growth susceptor to be capable of communicating with each other, a main heater for heating and melting Ga in the crucible and for cooling the melt Ga from a lower portion thereof to grow a single crystal, a sub heater for heating and evaporating As in the gas material susceptor and allowing the evaporated As to react with the melt Ga in the said crucible, and a magnetic field applying coil for applying a vertical magnetic field in the melt Ga and As in the crucible so that a surface of the melt in the crucible which is grown to a single crystal is lower in temperature at a central portion thereof than a peripheral portion thereof in a radial direction and at the same time projects upward.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.