Method of forming Josephson junction devices
US4904619A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 1988 |
| Grant date | Feb 27, 1990 |
| Priority date | — |
| Expiry date | Feb 1, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/832
Abstract
A method of producing a Josephson junction device consisting of thin films of superconducting materials such as niobium and niobium nitride that work at cryogenic temperatures, in which a base electrode layer, tunnel barrier layer and a counterelectrode layer constituting a Josephson junction are formed on a substrate. In order to form a desired electrode pattern on the counterelectrode layer, a resist pattern is used as a mask for dry etching, followed by a plasma ashing process for ablating part of the resist in order to form a terrace-shaped portion at the edges and corners of the counterelectrode pattern by reforming and shrinking the cross-sectional geometry of the resist. Then, a thin insulating film for covering the edged layers is deposited over the entire surface of substrate, followed by the removal of said resist pattern together with said insulating film deposited on said resist pattern in order to form a protecting layer around the counterelectrode pattern. The substrate further undergoes subsequent stages to produce a Josephson junction device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.