Light emitting device with disordered region
US4905060A · kind A · utility
23Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1988 |
| Grant date | Feb 27, 1990 |
| Priority date | — |
| Expiry date | May 25, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting device has a multiple layer film structure such as a multiple quantum well (MQW) structure which is made of an indium system compound semiconductor not containing phosphorus, wherein part of a region or regions of the multiple film structure is (are) a disordered region or regions disordered by introduction of an inpurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.