Thin-film transistor
US4905066A · kind A · utility
101Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 1989 |
| Grant date | Feb 27, 1990 |
| Priority date | — |
| Expiry date | Apr 19, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.