Patent · US Expired

Photoelectron beam converting device and method of driving the same

US4906894A · kind A · utility

20Cited by
14References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 28, 1989
Grant dateMar 6, 1990
Priority date
Expiry dateMar 28, 2009

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2201/3423
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A photoelectron beam converting device including a semiconductor substrate having a p-n junction formed between an n-type region and a p-type region and an opening portion formed on the side of the semiconductor substrate. An electron beam is generated by a light which enters from the opening portion and by a reverse voltage to be applied to the p-n junction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.