Device for the multiplication of charge carriers by an avalanche phenomenon and application of the said device to photosensors, photocathodes and infrared viewing devices
US4907042A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1987 |
| Grant date | Mar 6, 1990 |
| Priority date | — |
| Expiry date | Dec 9, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/155
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A device for the multiplication of charge carriers of a given type by an avalanche phenomenon includes: PA0 a semiconductor material of homogeneous composition, placed in an electrical field. Perpendicular to the working field, plane and parallel layers which are thin as compared with the thickness of the material separating them, are made in this material and are n-doped or p-doped depending on the type of charge carrier, the said layers forming reservoirs where charge carriers of the said type are confined. The injection of at least one charge carrier of the said type in the charge carrier multiplying device sets off the multiplication of charge carriers through a process of impact ionization. This charge carrier is accelerated by the working field and thus acquires energy sufficient to make it capable of ejecting a charge carrier of the said type from the doped layer. The charge carriers obtained are guided by the working field. This impact ionization process is repeated from one layer to the next, and thus constitutes an avalanche multiplication phenomenon. The device can be applied to photosensors, photocathodes and infrared viewing devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.