Photocathode
US4907051A · kind A · utility
1Cited by
5References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 12, 1988 |
| Grant date | Mar 6, 1990 |
| Priority date | — |
| Expiry date | May 12, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A photocathode with high photoelectric conversion ratio over an extended wavelength range of incident light has a hetero junction formed between thin films of a p-type amorphous silicon alloy having energy gap matching the energy of the incident light and an n-type semiconductor with small work function or large coefficient of secondary electron emission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.