Semiconductor tandem solar cells with metal silicide barrier
US4907052A · kind A · utility
24Cited by
11References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1989 |
| Grant date | Mar 6, 1990 |
| Priority date | — |
| Expiry date | Jan 23, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusion-blocking layer, the diffusion-blocking layer being provided between the p-layer and the n-layer. The semiconductor device can reduce the deterioration in quality which is caused by the diffusion of dopant atoms in the p-layer and n-layer, respectively, into the other layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.