Method of sintering articles of silicon nitride
US4908171A · kind A · utility
5Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Jan 27, 1988 |
| Grant date | Mar 13, 1990 |
| Priority date | — |
| Expiry date | Jan 27, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/593
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A novel method of sintering Si.sub.3 N.sub.4 shaped bodies which method comprises grinding Si.sub.3 N.sub.4 with the use of a grinding material down to a surface area magnitude of 10.5 to 35 m.sup.2 /g and an average particle size from 0.2 to 0.005 .mu.m, shaping the powder obtained, and sintering the compact under inert gas or nitrogen at a temperature from 1700.degree. to 1900.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.