Selective area nucleation and growth method for metal chemical vapor deposition using focused ion beams
US4908226A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 1988 |
| Grant date | Mar 13, 1990 |
| Priority date | — |
| Expiry date | May 23, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/89
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing metallic lines on an IC chip or mask is described using a focused ion beam (FIB) with a much lower ion dosage than previously required, on the order of 10.sup.14 -10.sup.15 ions/cm.sup.2. A substrate is scanned with the FIB to produce a series of nucleation sites on the substrate surface. These nucleation sites can be in an adlayer or can be produced by lattice damage or sputtering directly in the substrate material. The substrate is then exposed to a source gas containing the material to be deposited, while heated to a temperature slightly less than the spontaneous thermal decomposition temperature of the source gas. This results in a well-defined line of materials being deposited from the source gas along the line defined by the nucleation sites. The ratio of the spontaneous activation energy to the autocatalytic activation energy for the gases is preferably at least about an order of magnitude, and the FIB is preferably moved in multiple scans across the desired line. In a particular embodiment both the adlayer and source gas comprise iron pentacarbonyl, an ion dosage of 3.times.10.sup.14 ions/cm.sup.2 is used, and the substrate is heated to approximately…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.