Interline transfer CCD image sensing device with electrode structure for each pixel
US4908518A · kind A · utility
23Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 1989 |
| Grant date | Mar 13, 1990 |
| Priority date | — |
| Expiry date | Feb 10, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
In interline transfer type are image sensor wherein photogenerated charge is transferred from a pixel into a charge coupled dvice (CCD) or shift register. The CCD structure is typically composed of two or more overlapping levels of polysilicon electrodes associated with each row of pixels. In accordance with invention, a CCD with simplified structure and hence improved manufacturability is described. The CCD utilizes ion implanted barrier regions, which may be self-aligned such as described by Losee et al. U.S. Pat. No. 4,613,402, to produce a device with single polysilicon electrode associated with each pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.