Solid-state imaging device
US4908684A · kind A · utility
6Cited by
3References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 7, 1987 |
| Grant date | Mar 13, 1990 |
| Priority date | — |
| Expiry date | Jul 7, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/158
Abstract
A solid-state imaging device includes a vertical CCD shift register for transferring electric charge. The electrode of the vertical CCD located nearest to the substrate is extended outside of the region of the vertical CCD to a region of a layer where isolation is required. The layer is thus imparted with two functions, that is, the function of the CCD electrode and that of the iolation electrode. An overflow transistor is also provided to discharge excess charge produced by high intensity light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.