Film formation process
US4910041A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1988 |
| Grant date | Mar 20, 1990 |
| Priority date | — |
| Expiry date | Sep 9, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process of forming a film on a substrate, which comprises bringing a substrate into contact with a plasma zone formed by generating, by use of a discharge electrode or discharge electrodes, high temperature or quasi-high temperature plasma of a gas containing at least one carbon containing compound, wherein said electrode comprises a sheet-like electrode provided with a slit having a linear portion and connected to a microwave electric source; or wherein said plasma zone is formed by forcing a high temperature or quasi-high temperature plasma generated in an arc between said electrodes by DC discharge, to move by applying a magnetic field. The process enables formation of films on substrate surfaces in a high energy efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.