Ultraviolet light emitting device and application thereof
US4910044A · kind A · utility
8Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1988 |
| Grant date | Mar 20, 1990 |
| Priority date | — |
| Expiry date | Sep 1, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/482
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Ultraviolet light is emitted mainly with 185 nm in wave length so that a thick silicon layer is fabricated by decomposition of silane gas at a high deposition speed. As a light source, a bulb is filled with an amount of mercury gas without dosing argon gas which enhances preferentially light with 254 nm in wave length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.