Semiconductor body with heat sink
US4910583A · kind A · utility
13Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1988 |
| Grant date | Mar 20, 1990 |
| Priority date | — |
| Expiry date | Jun 2, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a semiconductor body, which is composed of at least one semiconductor device, especially one impatt-diode, with integrated heat sink. The series of semiconductor layers, out of which the semiconductor device is produced, is made up of one first p.sup.+ -doped semiconductor layer, which has the function of an etching stop layer, of a contact layer and a buffer layer at the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.