Method of annealing electrophotographic photosensitive device
US4912008A · kind A · utility
0Cited by
9References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 1988 |
| Grant date | Mar 27, 1990 |
| Priority date | — |
| Expiry date | May 31, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08221
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an electrophotographic photosensitive device, which comprises an electroconductive support, a photoconductive layer provided thereon, and a surface protective layer provided on the photoconductive layer, the surface protective layer being made from a film having a density of localized states of not more than 5.times.10.sup.17 cm.sup.-3 and a higher dark resistance than that of the photoconductive layer, the surface protective layer is less susceptible to deterioration, adhesion to the photoconductive layer is enhanced, and thus the device has a prolonged life.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.