Rapid thermal annealing of superconducting oxide precursor films on Si and SiO.sub.2 substrates
US4912087A · kind A · utility
75Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1988 |
| Grant date | Mar 27, 1990 |
| Priority date | — |
| Expiry date | Apr 15, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0661
Abstract
This invention is directed to a method of preparing a superconducting metal oxide film on silicon and silicon dioxide substrates. More particularly, the method comprises depositing by physical vapor deposition a superconducting metal oxide precursor directly on the substrate and then subjecting it to rapid thermal annealing in an oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.