Monolithic integrated planar semiconductor system and process for making the same
US4916494A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1987 |
| Grant date | Apr 10, 1990 |
| Priority date | — |
| Expiry date | Oct 6, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A monolithic integrated semiconductor device is described, wherein for the adjustment of the breakdown voltage a cover electrode (7) is disposed in the area of the pn-junctions and a corresponding potential is applied through a voltage divider (1) for adjusting the breakdown voltage. For maintaining a temperature independent breakdown voltage it is provided that the voltage divider (1) consists of resistors (R1, R2) in the form of diffused zones which have different doping levels. The resulting different temperature coefficients of the resistors (R1,R2) of the voltage divider cause a temperature dependent potential change of the cover electrode potential, whereby a temperature stabilization of the breakdown voltage is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.