Emissivity correction apparatus and method
US4919542A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1988 |
| Grant date | Apr 24, 1990 |
| Priority date | — |
| Expiry date | Apr 27, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2005/0074
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Radiation detectors and method measure the emissivity of a remote, heated semiconductor wafer in the presence of ambient radiation. Incident radiation within a selected waveband from a controlled source intermittently radiates the remote wafer, and reflected radiation therefrom is detected in synchronism with the intermittent incident radiation to yield output indications of emissivity of the wafer under varying processing conditions. The temperature of the wafer is monitored by another radiation detector (or detectors) operating substantially within the same selected waveband, and the temperature indications thus derived are corrected in response to the output indications of emissivity to provide indications of the true temperature of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.