Method for tapered etching
US4919748A · kind A · utility
74Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1989 |
| Grant date | Apr 24, 1990 |
| Priority date | — |
| Expiry date | Jun 30, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching metal layers including aluminum to create tapered sidewalls is disclosed. The method features the use of trifluoromethane and chlorine in controlled amounts to create a tapered metal layer profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.