Submicron dimension compound semiconductor fabrication using thermal etching
US4920069A · kind A · utility
14Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1988 |
| Grant date | Apr 24, 1990 |
| Priority date | — |
| Expiry date | Apr 15, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/169
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.