Tunable semiconductor laser
US4920542A · kind A · utility
28Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1989 |
| Grant date | Apr 24, 1990 |
| Priority date | — |
| Expiry date | Mar 22, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1228
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A tunable multisection laser of the invention includes an active layer (C2) which is thicker in a phase tuning section (S3) and in a grating section (S2) including a Bragg distributed reflector (R) having a controllable equivalent pitch than it is in a light amplification section (S1). The invention is particularly applicable to making components for telecommunications by means of optical fibers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.