Polycrystalline silicon capable of yielding long lifetime single crystalline silicon
US4921026A · kind A · utility
14Cited by
8References
10Claims
0Family size
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Key dates
| Filing date | Jun 1, 1988 |
| Grant date | May 1, 1990 |
| Priority date | — |
| Expiry date | Jun 1, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B13/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Polycrystalline silicon rod capable of providing within no more than two floating zoning passes, unicrystalline silicon exhibiting a resistivity of at least 10,000 ohm-cm (donor) and a lifetime of at least about 10,000 milliseconds, exhibits a copper X-ray diffraction pattern having a peak at 26.85.degree..+-.0.25.degree. (2 theta) and has less than 15 ppta boron and less than 20 ppta phosphorus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.