Brazing material
US4921158A · kind A · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1989 |
| Grant date | May 1, 1990 |
| Priority date | — |
| Expiry date | Feb 24, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mechanical and electrical bond between a silicon semiconductor wafer and a molybdenum contact is created by a multi-layer brazing material. The material includes adjacent layers of titanium and silver along with a layer which is either composed of aluminum or an aluminum-silicon composite. The material is heated to a temperature above its melting point. The aluminum reacts first with the silver, thereby dissolving less of the silicon. This reduces spiking and lowers the contact resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.