Method of producing a semiconductor memory device having trench capacitors
US4921815A · kind A · utility
9Cited by
1References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 8, 1988 |
| Grant date | May 1, 1990 |
| Priority date | — |
| Expiry date | Jun 8, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/37
Abstract
A D-RAM is disclosed which isolates the capacitors of memory cells and also isolates the adjacent memory cells by utilizing trenches formed on a semiconductor substrate. The device is particularly intended to the area of each memory cell and prevent the occurrence of a leakage current between the adjacent memory cells. Two side walls of the trench are used as the capacitors of two different memory cells, respectively, and these capacitors are isolated from each other by a thick oxide film that is formed on the bottom of each trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.