Multilayered electrophotographic photoreceptor of amorphous silicon having a surface layer of nitrogenated amorphous silicon
US4923773A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1988 |
| Grant date | May 8, 1990 |
| Priority date | — |
| Expiry date | Oct 18, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photoreceptor comprising a support, a charge blocking layer, a first photoconductive layer composed of at least amorphous silicon, a second photoconductive layer composed of at least boron-containing amorphous silicon, a surface layer composed of at least nitrogenated amorphous silicon, the surface layer having an interface for contacting the second photoconductive layer, the surface layer including a lower region corresponding to an area not greater than approximately 100 .ANG. away from the interface, the lower region having a ratio of not less than 0.5 parts of nitrogen atoms for one part of silicon atoms, the nitrogen ratio of the lower region and the boron content of the second photoconductive layer corresponding to the relation B.gtoreq.10.sup.(9N-5.5) where B is the boron content in PPM and N is the ratio of nitrogen atoms to silicon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.