Method of fabricating a semiconductor device by capping a conductive layer with a nitride layer
US4923822A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1989 |
| Grant date | May 8, 1990 |
| Priority date | — |
| Expiry date | May 22, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device in an integrated circuit. A conductive titanium layer is deposited on a substrate in which source, drain and gate regions have been created. A titanium nitride layer is applied as a cap over the titanium layer. A first anneal at a relatively low temperature is performed, causing portions of the titanium which are adjacent the silicon surface to form a titanium-silicon compound and causing the remaining titanium and titanium nitride to form a nitride coating. This nitride coating is etched away and a final high-temperature anneal is performed, resulting in thick, smooth titanium silicide (TiSi.sub.2) layers on the source and drain regions and gate pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.