Simplified method of fabricating lightly doped drain insulated gate field effect transistors
US4923824A · kind A · utility
5Cited by
19References
5Claims
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Key dates
| Filing date | Apr 27, 1988 |
| Grant date | May 8, 1990 |
| Priority date | — |
| Expiry date | Apr 27, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
Abstract
A lightly doped drain in an IGFET is provided by fabricating the transistor in a epitaxial layer lightly doped in the conductivity type of the channel for the device. The laterally reduced dopant concentration of the drain, and a lightly doped source if desired, is provided by leaving portions of the epitaxial layer unmodified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.