Anti-radiation covering for electronic components
US4925772A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1988 |
| Grant date | May 15, 1990 |
| Priority date | — |
| Expiry date | Nov 4, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cover layer for micro-electronic components and VLSI circuits is provided for protecting the components and circuits against alpha radiation. The cover layer is produced by ultraviolet cross linking of a negative resist, wherein, as a constituent for absorbing the alpha rays, the negative resist contains a substituted triphosphazene of the formula (I) whose organic radicals are bonded to phosphorus via oxygen and wherein, on a statistical average, 1 through 3 radicals have cross-linkable, light-sensitive groups. The cover layer provided good protection from alpha rays, has low shrinkage during curing and, given high thermal resistance, can be combined when mixing with other negative resists. ##STR1##
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.