Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
US4925809A · kind A · utility
38Cited by
13References
6Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 1, 1988 |
| Grant date | May 15, 1990 |
| Priority date | — |
| Expiry date | Jul 1, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/959
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities therefrom which causes auto-doping, thereby preventing silicon particles from being produced at the peripheral surface and preventing the semiconductor wafer from being contaminated by the silicon particles during the manufacturing of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.