Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor
US4926074A · kind A · utility
38Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1988 |
| Grant date | May 15, 1990 |
| Priority date | — |
| Expiry date | Oct 24, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral IGT is switched off in order to reduce turn off power dissipation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.