Indium arsenide magnetoresistor
US4926154A · kind A · utility
17Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1989 |
| Grant date | May 15, 1990 |
| Priority date | — |
| Expiry date | Oct 25, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thickneses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.