Magnetic field sensors
US4926226A · kind A · utility
17Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1988 |
| Grant date | May 15, 1990 |
| Priority date | — |
| Expiry date | Sep 6, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8171
Abstract
A magnetodiode for use in a magnetic sensor using a semiconductive element (advantageously of a direct band-gap, high mobility material such as gallium arsenide) that has a superlattice formed by an n-i-p-i doping profile or superstructure. Such a superlattice is used to provide a region of long recombination times for the normal flow of charge carriers from which the carriers are deflected into short recombination time regions by a magnetic field being sensed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.