Method of minimizing implant-related damage to a group II-VI semiconductor material
US4927773A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1989 |
| Grant date | May 22, 1990 |
| Priority date | — |
| Expiry date | Jun 5, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/385
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming in a semiconductor material a region having a different chemical composition or a different concentration than a chemical composition or concentration of material surrounding the region. The method includes an initial step of providing a substantially single crystalline body of material, such as an epitaxial layer 10 of HgCdTe. Another step forms a cap layer 12 over a surface of the body, the layer having a thickness T. The cap layer 12 is comprised of a layer of polycrystalline material, such as CdTe, or is comprised of a layer of an organic material, an amorphous dielectric or a single-crystalline layer. A further step implants a selected chemical species through an upper surface of the cap, the species being implanted to a depth such that substantially no implant damage is sustained by the underlying body. In p-n junction formation the species is selected to form a region having an opposite type of electrical conductivity than the conductivity of the layer 10. A further step diffuses during a thermal anneal the implanted species from the cap layer down into the underlying layer to form a region therein having a different chemical composition or concentration …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.