Method of improving yield of LED arrays
US4927778A · kind A · utility
8Cited by
16References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 5, 1988 |
| Grant date | May 22, 1990 |
| Priority date | — |
| Expiry date | Aug 5, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/099
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A high yield method for the fabrication of multi-element, gallium-arsenide-phosphide light emitting diode arrays having square light emitting elements 7903 square microns on 88.9 micron center suitable for use in electronic/optical printers, is described. The resulting arrays at a current density of 200 A/cm.sup.2 have 0.6% power efficiency and a radiant exitance of 3.8 W cm -2 with less than 2% standard deviation in element to element radiant exitance. The integrated, relatively low cost LED arrays, are particularly suitable for use in electronic/optical printing applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.